MaxPower Semiconductor Inc. is a fabless power semiconductor provider dedicated to delivering innovative and cost-effective technologies that optimize Power Management Solutions. Unlike other semiconductor providers, MaxPower’s size and expertise enable unmatched customer service for a completely collaborative partnership.
With a vast and constantly growing IP portfolio, MaxPower’s proprietary device structures and process techniques enable its customers and strategic partners with the competitive advantages needed to continue to provide leading edge products to the marketplace. Extensive experience in research & development, design, and applications knowledge are a part of each and every product and/or service that MaxPower provides—ensuring higher performance that exceeds expectations.
Our Core Products
- Custom, Discrete Power MOSFETs
- Standard, Discrete Power MOSFETs
- Die, Wafer, and Assembled Product Sales
- Technology Provider for Strategic Partnerships
- Distribution Partnerships
- Consumer Electronics
- Automotive Modules
- Computing Industry
- Industrial Equipment
Our Leadership Team
Dr. Mohamed Darwish, Ph.D.
Founder, President, & CEO
Dr. Mohamed Darwish has more than 25 years of experience working in the power semiconductor field serving as the Vice President of Technology at Fultec Semiconductor, Senior Director of Engineering at Vishay Siliconix, Director of Device Technology at Power Integrations Inc., and distinguished member of AT&T Bell Laboratories Technical Staff. Dr. Darwish specializes in the areas of power trench MOSFETs, high voltage ICs, BCDMOS, and submicron CMOS.
In addition to holding more than 100 issued and pending patents, Dr. Darwish’s inventions include the Lateral Insulated Gate Bipolar Transistor (LIGBT) and the WFET and Turbo-FET trench MOSFET—the current leading technology at Vishay Siliconix. In 2011, Dr. Darwish served as the General Chair for the International Symposium on Power Semiconductor Devices and ICs (ISPSD). He is also the Editor of Power Semiconductor Devices, IEEE Trans Electron Devices. Dr. Darwish received his Ph.D. in Electrical Engineering from the University of Wales, United Kingdom.
Dr. Jun Zeng, Ph.D.
Co-Founder & CTO
曾军博士是InPower Semiconductor Corp的联合创始人，总裁兼首席技术官。以及Pyramis Corp（Delta Electronics半导体子公司）的联合创始人兼首席技术官。曾博士曾荣获Harris Semiconductor Power Leadership Award高级工程师，他是Fairchild Semiconductor高密度Power Trench MOSFET技术的首席开发人员，以及Clare Corp的芯片设计科学家。他是Fairchild Semiconductor全自对准工艺Split-Gate Power Trench MOSFET技术的发明者，Intersil超高密度沟道栅极MOSFET技术的共同发明，Harris Semiconductor双阱/分阱技术的共同发明人，以及MaxPower MaxFET和MaxIGBT技术的共同发明人。他成功地开发了仿真复杂功率器件的“瞬态致稳态”数值模拟技术。
曾军博士在多个技术出版物（包括技术期刊和会议文献）上发表过30多篇文章，并担任国际功率半导体器件和集成电路国际会议（ISPSD）和欧洲SiC及相关材料国际会议(ECSCRM) 的技术委员会成员和分会主席。并长期担任IEEE-ED, IEEE-EDL, IEEE-TDMR, SSE等学术刊物的审稿人。
Mr. Amr Darwish, MBA
Mr. Amr Darwish has over twelve years of experience in the semiconductor field. During his time at Integrated Device Technology (IDT), Amr served in various Product Marketing and Technical roles, which spanned over North America, Europe, and Asia.
Amr is now a Founding Member of MaxPower Semiconductor, where he serves as the COO.
With a Bachelor of Science in Electrical Engineering (BSEE) and a Masters in Business Administration (MBA), Amr has been able to use his blend of disciplines to create effective corporate & sales strategies and key strategic relationships, which have proliferated MaxPower’s products into consumer, industrial, and automotive marketplaces.
Dr. Richard Blanchard, Ph.D.
Chief Technology Advisor
Dr. Richard Blanchard has more than 35 years of experience working in the power semiconductor field serving as the Founder and Vice President of Supertex Inc., Founder and Consulting Engineer at Cognition Inc., and Vice President of Engineering and Vice President of R&D at Supertex, Siliconix, and IXYS. At Siliconix, he was responsible for the development of the industry’s first trench MOSFET product. He is also the inventor of two key TrenchFET patents.
Dr. Blanchard specializes in the development of discrete Power MOSFETs, Power MOSFETs in integrated circuits, and high voltage Superjunction MOSFETs. He holds more than 200 issued and pending patents in the areas of discrete and integrated power device processes and structures. Dr. Blanchard received his Ph.D. in Electrical Engineering from Stanford University and MSEE/BSEE from M.I.T.