To maximize device performance and minimize system cost with breakthrough technology and innovative designs.
MaxPower Semiconductor Inc. is a fabless power semiconductor provider dedicated to delivering innovative and cost-effective technologies that optimize Power Management Solutions. Unlike other semiconductor providers, MaxPower’s size and expertise enable unmatched customer service for a completely collaborative partnership.
With a vast and constantly growing IP portfolio, MaxPower’s proprietary device structures and process techniques enable its customers and strategic partners with the competitive advantages needed to continue to provide leading edge products to the marketplace. Extensive experience in research & development, design, and applications knowledge are a part of each and every product and/or service that MaxPower provides—ensuring higher performance that exceeds expectations.
Our Core Products
- Custom, Discrete Power MOSFETs
- Standard, Discrete Power MOSFETs
- Die, Wafer, and Assembled Product Sales
- Technology Provider for Strategic Partnerships
- Distribution Partnerships
- Consumer Electronics
- Automotive Modules
- Computing Industry
- Industrial Equipment
Our Leadership Team
Dr. Mohamed Darwish, Ph.D. Founder, President, & CEO
Dr. Mohamed Darwish has more than 30+ years of experience working in the power semiconductor field serving as the Vice President of Technology at Fultec Semiconductor, Senior Director of Engineering at Vishay Siliconix, Director of Device Technology at Power Integrations Inc., and distinguished member of AT&T Bell Laboratories Technical Staff. Dr. Darwish specializes in the areas of power trench MOSFETs, high voltage ICs, BCDMOS, and submicron CMOS. In addition to holding more than 100 issued and pending patents, Dr. Darwish’s inventions include the Lateral Insulated Gate Bipolar Transistor (LIGBT) and the WFET and Turbo-FET trench MOSFET—the current leading technology at Vishay Siliconix. In 2011, Dr. Darwish served as the General Chair for the International Symposium on Power Semiconductor Devices and ICs (ISPSD). He is also the Editor of Power Semiconductor Devices, IEEE Trans Electron Devices. Dr. Darwish received his Ph.D. in Electrical Engineering from the University of Wales, United Kingdom.
Dr. Jun Zeng, Ph.D. Co-Founder & CTO
Jun Zeng, Ph.D, Co-founder, CTO and Executive VP of MaxPower Semiconductor, has more than 30 years of experience in the power semiconductor field. Dr. Zeng was the Co-Founder, President, and CTO of InPower Semiconductor Corp, and Co-Founder and CTO of Pyramis Corporation (the semiconductor subsidiary of Delta Electronics). Dr. Zeng is credited with accomplishments such as being named a Power Leadership Award-winning staff engineer at Harris Semiconductor, leading engineer of the high-density Power Trench MOSFET technology at Intersil/Fairchild Semiconductor, and Chip Design Scientist at the Clare Corporation. Dr. Zeng is the inventor of the Fairchild Fully Self-Aligned Split-Gate Power Trench technology, the co-inventor of the Intersil Ultra high-density Trench-Gate MOSFET technology, the co-inventor of the Harris Dual-Well/Split-Well technology, and the co-inventor of MaxPower’s MaxFET, MaxIGBT, and MaxSiC Dual Trench Silicon Carbide (SiC) MOSFET technologies. He successfully developed “Transient-to-Steady” numerical technique for design and simulation of complex power devices. Dr. Zeng specializes in the areas of power semiconductor devices and process development, including Planar & Trench MOSFET, IGBT, Thyristor, FRD, Superjunction Devices, SiC Power Devices, and HV-BCD technology for Smart Power ICs in telecom and power supplies. He holds more than 100 issued and pending patents. Dr. Zeng is the author or co-author of more than 30 technical publications in journals and conference proceedings. He has served as the technical committee member or session chair for the International Symposium of Power Semiconductor Devices and ICs (ISPSD) and The European Conference on Silicon Carbide and Related Materials (ECSCRM). Additionally, he has been a frequent technical paper reviewer for IEEE-ED, IEEE-EDL, IEEE-TDMR, SSE and various other publications.
Mr. Amr Darwish, MBA COO
Mr. Amr Darwish has over 16+ years of experience in the semiconductor field. During his time at Integrated Device Technology (IDT), Amr served in various Product Marketing and Technical roles, which spanned over North America, Europe, and Asia. Amr is now a Founding Member of MaxPower Semiconductor, where he serves as the COO. With a Bachelor of Science in Electrical Engineering (BSEE) and a Masters in Business Administration (MBA), Amr has been able to use his blend of disciplines to create effective corporate & sales strategies and key strategic relationships, which have proliferated MaxPower’s products into consumer, industrial, and automotive marketplaces.
Dr. Richard Blanchard, Ph.D. Chief Technology Advisor
Dr. Richard Blanchard has more than 40+ years of experience working in the power semiconductor field serving as the Founder and Vice President of Supertex Inc., Founder and Consulting Engineer at Cognition Inc., and Vice President of Engineering and Vice President of R&D at Supertex, Siliconix, and IXYS. At Siliconix, he was responsible for the development of the industry’s first trench MOSFET product. He is also the inventor of two key TrenchFET patents. Dr. Blanchard specializes in the development of discrete Power MOSFETs, Power MOSFETs in integrated circuits, and high voltage Superjunction MOSFETs. He holds more than 200 issued and pending patents in the areas of discrete and integrated power device processes and structures. Dr. Blanchard received his Ph.D. in Electrical Engineering from Stanford University and MSEE/BSEE from M.I.T.
Join Us to Power Your Career Path
MaxPower is home to some of the world’s foremost experts in Power Semiconductor Devices. If you would like to contribute to providing innovative solutions to the world of Power Management, apply today and take your career to new and exciting heights.